1 magnetron sputtering principle:
An orthogonal magnetic field and an electric field are added between the sputtering target electrode (cathode) and the anode, and the inert gas (usually AR) is filled in the high vacuum chamber, and the permanent magnet forms a 350°c magnetic field on the surface of the target material, which composes a positive magnetic field with the High-voltage electric field. Under the action of the electric field, AR gas ionization into positive ions and electrons, with a certain negative pressure on the target, the effect of the electrons emitted from the target is increased by the magnetic field and the ionization probability of the working gas, and the high density plasma is formed near the cathode, the AR ion accelerates to the target plane under the action of Lorentz force, bombarding the target surface at a high velocity, so that the atoms sputtered on the target follow the principle of momentum conversion, and the higher kinetic energy is separated from the target plane into the substrate and deposited into a film. Magnetron sputtering is generally divided into two kinds: DC sputtering and RF sputtering, in which the principle of DC sputtering equipment is simple, and the rate of sputtering metal is fast. and RF sputtering is more widely used, in addition to sputtering conductive materials, but also sputtering non-conductive materials, but also can be reactive sputtering preparation of oxides, nitride and carbide compounds such as materials. If the frequency of RF is increased after microwave plasma sputtering, there are now commonly used electron cyclotron resonance (ECR) type microwave plasma sputtering.
2 types of magnetron sputtering target materials:
Metal sputtering coating target material, sputtering target material, ceramic sputtering target, boron-ceramic sputtering target, carbide sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering target, oxide ceramic target, and selenium-ceramic sputtering target, silica ceramic sputtering target, sulfide ceramic sputtering target, tellurium ceramic sputtering target, other ceramic targets, chromium-doped silica ceramic target (Cr-sio), indium phosphide Target (INP), arsenic lead target (PBAs), Indium arsenide Target (Inas).